High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

Iwamoto, Naoya*; Azarov, A.*; Oshima, Takeshi; Moe, A. M. M.*; Svensson, B. G.*

Journal of Applied Physics, 118(4), p.045705_1 - 045705_8, 2015/07

https://doi.org/10.1063/1.4927040

Identification of divacancies in 4H-SiC

Son, N. T.*; Umeda, Takahide*; Isoya, Junichi*; Gali, A.*; Bockstedte, M.*; Magnusson, B.*; Ellison, A.*; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; et al.

Physica B; Condensed Matter, 376-377, p.334 - 337, 2006/04

https://doi.org/10.1016/j.physb.2005.12.086

no abstracts in English

Mechanisms of reduction in hole concentration in Al-doped 4H-SiC by electron irradiation

Matsuura, Hideharu*; Kagamihara, So*; Ito, Yuji*; Oshima, Takeshi; Ito, Hisayoshi

Microelectronic Engineering, 83(1), p.17 - 19, 2006/01

https://doi.org/10.1016/j.mee.2005.10.015

no abstracts in English

Charge induced in 6H-SiC pn diodes by irradiation of oxygen ion microbeams

Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Onoda, Shinobu; Hirao, Toshio; Ito, Hisayoshi

Materials Science Forum, 527-529, p.1347 - 1350, 2006/00

Charge induced in 6H-SiC pn diodes by oxygen ion microbeams was examined in an energy range between 6 and 18 MeV. To minimize the influence of damage, single ion hit Transient Ion Beam Induced Current (TIBIC) measurement system, in which the transient current induced by single ion incidence can be measured, was used in this study. The value of charge increases with increasing reverse applied bias, and the saturation of charge is observed when the depletion layer becomes longer than ion range. An increase of collected charge by the funneling effect (the generation of a transient electric filed) is observed in the case of the depletion layer shorter than ion range. The charge collection efficiency is estimated to be 100 % in the saturation region (the depletion layer longer than ion range). It strongly suggests that high quality particle detectors are fabricated using SiC.

Characterization of charge generated in silicon carbide np diodes using transient ion beam-induced current

Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Yamakawa, Takeshi; Onoda, Shinobu; Wakasa, Takeshi; Laird, J. S.; Hirao, Toshio; Kamiya, Tomihiro; Ito, Hisayoshi; et al.

Nuclear Instruments and Methods in Physics Research A, 541(1-2), p.236 - 240, 2005/04

https://doi.org/10.1016/j.nima.2005.01.062

In order to develop particle detectors based on SiC semiconductor, SiC pn-diodes were irradiated with microbeam of 15MeV oxygen ions. The transient current was measured using the single ion hit transient ion beam induced current (TIBIC) system at TIARA. As the results, peak intensity of transient current induded by ion irradiation increased and falltime decreased with increasing applied bias. By the integration of transient current, the charge collection was estimated. It was found that charges generated in deeper region beyond the depletion layer can be collected by the funneling effect.

Negative-U-centers in 4H- and 6H-SiC detected by spectral light excitation

Weidner, M.*; Pensl, G.*; Nagasawa, Hiroyuki*; Schner, A.*; Oshima, Takeshi

Materials Science Forum, 457-460, p.485 - 488, 2004/10

no abstracts in English

Evaluation of the characteristics of silicon carbide diodes using transient-IBIC technique

Oshima, Takeshi; Lee, K. K.; Onoda, Shinobu*; Kamiya, Tomihiro; Oikawa, Masakazu*; Laird, J. S.; Hirao, Toshio; Ito, Hisayoshi

Nuclear Instruments and Methods in Physics Research B, 210, p.201 - 205, 2003/09

https://doi.org/10.1016/S0168-583X(03)01070-X

Electrodes on SiC pn diode were studied uising Transient Ion Beam Induced Current system (TIBIC). pn junction of SiC diode was formed by phosphorus ion implantation at 800 C and subsequent annealing at 1800 C for 1 min in Ar. Electrodes of diode were fabricated (1) Al evaporation and sintering at 850 C or (2) one more Al evaporation after the process mentioned above. TIBIC measurement using 15 MeV-O and 12 MeV-Ni ion micro beam. As the result, non-uniformity for transient current from the electrodes of diode (1)was observed. As for diode (2), such non-uniformity was not observed. On the other hand, the value of collected charges was the same for both diodes. This indicates that the quality of pn junction is the almost same for both diodes. For current-voltage characteristics, both diodes showed a order of pA at reverse bias of 30 V and turn-on at forward bias of 2V which are ideal for SiC diode. Thus, we can conclude that we obtain the information on electrical characteristics of electrodes which is not obtained from normal current-voltage measurement.

Positron annihilation due to silicon vacancies in 3C and 6H SiC epitaxial layers induced by 1MeV electron irradiation

Kawasuso, Atsuo; Redmann, F.*; Krause-Rehberg, R.*; Yoshikawa, Masahito; Kojima, Kazutoshi; Ito, Hisayoshi

Physica Status Solidi (B), 223(2), p.R8 - R10, 2001/01

https://doi.org/10.1002/1521-3951(200101)223:23.0.CO;2-N

no abstracts in English

Generation and annihilation of intrinsic-related defect centers in 4H/6H-SiC

Frank, T.*; Weidner, M.*; Ito, Hisayoshi; Pensl, G.*

Materials Science Forum, 353-356, p.439 - 442, 2001/00

no abstracts in English

Synthesis of SiC-based fibers derived from hybrid polymer of polycarbosilane and polyvinylsilane

Idesaki, Akira*; Narisawa, Masaki*; *; Sugimoto, Masaki; Seguchi, Tadao; Ito, Masayoshi*

Key Engineering Materials, 159-160, p.107 - 111, 1999/00

no abstracts in English